AOWF8N50
RoHS

AOWF8N50

AOWF8N50

MOSFET N-CH 500V 8A TO262F

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AOWF8N50

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Shiped FromShenZhen Warehourse
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Products Specifications
Vgs(th) (Max) @ Id4.5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-262F
Series-
Rds On (Max) @ Id, Vgs850 mOhm @ 4A, 10V
Power Dissipation (Max)27.8W (Tc)
PackagingTube
Package / CaseTO-262-3 Full Pack, I²Pak
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time26 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1042pF @ 25V
Gate Charge (Qg) (Max) @ Vgs28nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)500V
Detailed DescriptionN-Channel 500V 8A (Tc) 27.8W (Tc) Through Hole TO-262F
Current - Continuous Drain (Id) @ 25°C8A (Tc)