EPC2033ENGRT
RoHS

EPC2033ENGRT

EPC2033ENGRT

EPC

TRANS GAN 150V 31A BUMPED DIE

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EPC2033ENGRT

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Shipping Information
Shiped FromShenZhen Warehourse
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Products Specifications
Vgs(th) (Max) @ Id2.5V @ 9mA
Vgs (Max)+6V, -4V
TechnologyGaNFET (Gallium Nitride)
Supplier Device PackageDie
SerieseGaN®
Rds On (Max) @ Id, Vgs7 mOhm @ 25A, 5V
Power Dissipation (Max)-
PackagingTape & Reel (TR)
Package / CaseDie
Other Names917-1141-2 917-1141-2-ND 917-EPC2033ENGRTR
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1140pF @ 75V
Gate Charge (Qg) (Max) @ Vgs10nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)5V
Drain to Source Voltage (Vdss)150V
Detailed DescriptionN-Channel 150V 31A (Ta) Surface Mount Die
Current - Continuous Drain (Id) @ 25°C31A (Ta)