In Stock:
3834
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Products Specifications
| Package | Bulk |
|---|---|
| Series | - |
| ProductStatus | Obsolete |
| FETType | - |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| DraintoSourceVoltage(Vdss) | 650 V |
| Current-ContinuousDrain(Id)@25°C | 8A (Tc) (158°C) |
| DriveVoltage(MaxRdsOn | - |
| MinRdsOn) | 170mOhm @ 8A |
| RdsOn(Max)@Id | - |
| Vgs | - |
| Vgs(th)(Max)@Id | - |
| Vgs(Max) | 720 pF @ 35 V |
| InputCapacitance(Ciss)(Max)@Vds | - |
| FETFeature | 200W (Tc) |
| PowerDissipation(Max) | -55°C ~ 225°C (TJ) |
| OperatingTemperature | Surface Mount |
| MountingType | TO-276 |
| SupplierDevicePackage | TO-276AA |
| Package/Case | - |
| GateCharge(Qg)(Max)@Vgs | - |
| Grade | |
| Qualification |
