GA05JT01-46
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GA05JT01-46

GA05JT01-46

GeneSiC Semiconductor

TRANS SJT 100V 9A TO46

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GA05JT01-46

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Products Specifications
PackageBulk
Series-
ProductStatusObsolete
FETType-
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)9A (Tc)
Current-ContinuousDrain(Id)@25°C240mOhm @ 5A
DriveVoltage(MaxRdsOn-
MinRdsOn)-
RdsOn(Max)@Id20W (Tc)
Vgs-55°C ~ 225°C (TJ)
Vgs(th)(Max)@IdThrough Hole
Vgs(Max)TO-46
InputCapacitance(Ciss)(Max)@VdsTO-46-3
FETFeature100 V
PowerDissipation(Max)-
OperatingTemperature-
MountingType-
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification