GA06JT12-247
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GA06JT12-247

GA06JT12-247

GeneSiC Semiconductor

TRANS SJT 1200V 6A TO247AB

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GA06JT12-247

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Products Specifications
PackageTube
Series-
ProductStatusObsolete
FETType-
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C6A (Tc) (90°C)
DriveVoltage(MaxRdsOn-
MinRdsOn)220mOhm @ 6A
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds175°C (TJ)
FETFeatureThrough Hole
PowerDissipation(Max)TO-247AB
OperatingTemperatureTO-247-3
MountingType-
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification