GA08JT17-247
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GA08JT17-247

GA08JT17-247

GeneSiC Semiconductor

TRANS SJT 1700V 8A TO247AB

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GA08JT17-247

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Products Specifications
PackageTube
Series-
ProductStatusObsolete
FETType-
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1700 V
Current-ContinuousDrain(Id)@25°C8A (Tc) (90°C)
DriveVoltage(MaxRdsOn-
MinRdsOn)250mOhm @ 8A
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature48W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AB
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification