GA10SICP12-263
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GA10SICP12-263

GA10SICP12-263

GeneSiC Semiconductor

TRANS SJT 1200V 25A D2PAK

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GA10SICP12-263

In Stock: 3103
Pricing
QTY UNIT PRICE EXT PRICE
1 28.0497
10 27.4887
100 26.6472
1000 25.8057
10000 24.6837
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
PackageTube
Series-
ProductStatusActive
FETType-
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C25A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)100mOhm @ 10A
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)1403 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature170W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263-7
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification