GDP30P120B
RoHS

GDP30P120B

GDP30P120B

DIODE SCHOTTKY 1200V 81A TO247-2

GDP30P120B

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Products Specifications
Voltage - Peak Reverse (Max)Silicon Carbide Schottky
Voltage - Forward (Vf) (Max) @ If81A
Voltage - BreakdownTO-247-2
SeriesAmp+™
RoHS StatusTube
Reverse Recovery Time (trr)No Recovery Time > 500mA (Io)
Resistance @ If, F1790pF @ 1V, 1MHz
PolarizationTO-247-2
Other Names1560-1024-5
Operating Temperature - Junction0ns
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Part NumberGDP30P120B
Expanded DescriptionDiode Silicon Carbide Schottky 1200V (1.2kV) 81A Through Hole TO-247-2
Diode Configuration100µA @ 1200V
DescriptionDIODE SCHOTTKY 1200V 81A TO247-2
Current - Reverse Leakage @ Vr1.7V @ 30A
Current - Average Rectified (Io) (per Diode)1200V (1.2kV)
Capacitance @ Vr, F-55°C ~ 135°C