GP1M003A090C
RoHS

GP1M003A090C

GP1M003A090C

MOSFET N-CH 900V 2.5A DPAK

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GP1M003A090C

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Shiped FromShenZhen Warehourse
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Products Specifications
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD-Pak
Series-
Rds On (Max) @ Id, Vgs5.1 Ohm @ 1.25A, 10V
Power Dissipation (Max)94W (Tc)
PackagingCut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other Names1560-1157-1
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds748pF @ 25V
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)900V
Detailed DescriptionN-Channel 900V 2.5A (Tc) 94W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25°C2.5A (Tc)