2N6786
RoHS

2N6786

2N6786

Harris

N-CHANNEL POWER MOSFET

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2N6786

In Stock: 7578
Pricing
QTY UNIT PRICE EXT PRICE
1 0.74
10 0.7252
100 0.703
1000 0.6808
10000 0.6512
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
MfrHarris Corporation
Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)400 V
Current - Continuous Drain (Id) @ 25u00b0C1.25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.7Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id4V @ 250u00b5A
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Vgs (Max)u00b120V
Input Capacitance (Ciss) (Max) @ Vds170 pF @ 25 V
FET Feature-
Power Dissipation (Max)15W (Tc)
Operating Temperature-55u00b0C ~ 150u00b0C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-205AF (TO-39)
Package / CaseTO-205AF Metal Can