IXFV110N10P
RoHS

IXFV110N10P

IXFV110N10P

IXYS

MOSFET N-CH 100V 110A PLUS220

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IXFV110N10P

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Products Specifications
Vgs(th) (Max) @ Id5V @ 4mA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackagePLUS220
SeriesPolarHT™ HiPerFET™
Rds On (Max) @ Id, Vgs15 mOhm @ 500mA, 10V
Power Dissipation (Max)480W (Tc)
PackagingBulk
Package / CaseTO-220-3, Short Tab
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds3550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 110A (Tc) 480W (Tc) Through Hole PLUS220
Current - Continuous Drain (Id) @ 25°C110A (Tc)