VWM200-01P
RoHS

VWM200-01P

VWM200-01P

IXYS

MOSFET 6N-CH 100V 210A V2-PAK

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VWM200-01P

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Products Specifications
PackageBox
Series-
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration6 N-Channel (3-Phase Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)100V
Current-ContinuousDrain(Id)@25°C210A
RdsOn(Max)@Id5.2mOhm @ 100A, 10V
Vgs4V @ 2mA
Vgs(th)(Max)@Id430nC @ 10V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds-
Power-Max-40°C ~ 175°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeV2-PAK
Package/CaseV2-PAK
SupplierDevicePackage
Grade
Qualification