In Stock:
0
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 24.041 | |
| 10 | 23.56 | |
| 100 | 22.84 | |
| 1000 | 22.12 | |
| 10000 | 21.16 |
Products Specifications
| Package | Bulk |
|---|---|
| Series | - |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tj) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 20A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 800 V |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Drive Voltage (Max Rds On, Min Rds On) | 12V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 341W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
