In Stock:
0
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 117.637 | |
| 10 | 115.284 | |
| 100 | 111.75 | |
| 1000 | 108.23 | |
| 10000 | 103.52 |
Products Specifications
| Package | Bulk |
|---|---|
| Series | - |
| Product Status | Active |
| Technology | SiCFET (Silicon Carbide) |
| Configuration | 2 P-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tj) |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 20mA |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 2930pF @ 800V |
| Power - Max | 208W (Tc) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
