
In Stock:
0
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 10.388 | |
10 | 10.18 | |
100 | 9.87 | |
1000 | 9.56 | |
10000 | 9.14 |
Products Specifications
Package | Bulk |
---|---|
Series | - |
Product Status | Active |
FET Type | P-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 750 V |
Current - Continuous Drain (Id) @ 25°C | 35.6A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 12V |
Rds On (Max) @ Id, Vgs | 56mOhm @ 25A, 12V |
Vgs(th) (Max) @ Id | 6V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 400 V |
FET Feature | - |
Power Dissipation (Max) | 181W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TOLL |
Package / Case | 8-PowerSFN |
Grade | - |
Qualification | - |