850B
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850B

850B

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850B

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Shiped FromShenZhen Warehourse
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Products Specifications
Collector-Emitter Breakdown Voltage (Vceo)35V
Power Dissipation (Pd)250mW
Collector Current (Ic)100mA
DC Current Gain (hFE@Ic,Vce)240@10u03bcA,5V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)90mV@10mA,0.5mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)