2SK3906
RoHS

2SK3906

2SK3906

Toshiba

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2SK3906

In Stock: 5380
Pricing
QTY UNIT PRICE EXT PRICE
1 6.0
10 5.88
100 5.7
1000 5.52
10000 5.28
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
MfrToshiba Semiconductor and Storage
Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25u00b0C20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs330mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)u00b130V
Input Capacitance (Ciss) (Max) @ Vds4250 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature150u00b0C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(N)
Package / CaseTO-3P-3, SC-65-3
Base Product Number2SK3906