SI2342DS-T1-GE3
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SI2342DS-T1-GE3

SI2342DS-T1-GE3

Vishay Siliconix

MOSFET N-CH 8V 6A SOT-23

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SI2342DS-T1-GE3

In Stock: 21513
Pricing
QTY UNIT PRICE EXT PRICE
1 0.5733
10 0.5618
100 0.5446
1000 0.5274
10000 0.5045
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)8 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn17mOhm @ 7.2A, 4.5V
MinRdsOn)800mV @ 250µA
RdsOn(Max)@Id15.8 nC @ 4.5 V
Vgs±5V
Vgs(th)(Max)@Id1070 pF @ 4 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.5W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureSOT-23-3 (TO-236)
MountingTypeTO-236-3, SC-59, SOT-23-3
SupplierDevicePackage1.2V, 4.5V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification