SI3900DV-T1-E3
RoHS

SI3900DV-T1-E3

SI3900DV-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 2A 6TSOP

Download Datasheet

SI3900DV-T1-E3

In Stock: 15409
Pricing
QTY UNIT PRICE EXT PRICE
1 0.8395
10 0.8227
100 0.7975
1000 0.7723
10000 0.7388
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Request Quotation
Products Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C2A
RdsOn(Max)@Id125mOhm @ 2.4A, 4.5V
Vgs1.5V @ 250µA
Vgs(th)(Max)@Id4nC @ 4.5V
GateCharge(Qg)(Max)@Vgs-
InputCapacitance(Ciss)(Max)@Vds830mW
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-6 Thin, TSOT-23-6
Package/Case6-TSOP
SupplierDevicePackage-
Grade-
Qualification