SIA421DJ-T1-GE3
RoHS

SIA421DJ-T1-GE3

SIA421DJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 12A PPAK SC70-6

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SIA421DJ-T1-GE3

In Stock: 22284
Pricing
QTY UNIT PRICE EXT PRICE
1 1.1058
10 1.0837
100 1.0505
1000 1.0173
10000 0.9731
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)35mOhm @ 5.3A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs29 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)950 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.5W (Ta), 19W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification