SIHB22N65E-GE3
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SIHB22N65E-GE3

SIHB22N65E-GE3

Vishay Siliconix

MOSFET N-CH 650V 22A D2PAK

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SIHB22N65E-GE3

In Stock: 4018
Pricing
QTY UNIT PRICE EXT PRICE
1 2.2705
10 2.2251
100 2.157
1000 2.0889
10000 1.998
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C22A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)180mOhm @ 11A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs110 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2415 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature227W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification