SIHF12N65E-GE3
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SIHF12N65E-GE3

SIHF12N65E-GE3

Vishay Siliconix

MOSFET N-CH 650V 12A TO220

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SIHF12N65E-GE3

In Stock: 7829
Pricing
QTY UNIT PRICE EXT PRICE
1 2.6568
10 2.6037
100 2.524
1000 2.4443
10000 2.338
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)380mOhm @ 6A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs70 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1224 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature33W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220 Full Pack
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification