

W947D2HBJX5I
W947D2HBJX5I
DRAM Chip Mobile LPDDR SDRAM 128M-Bit 4Mx32 1.8V 90-Pin VFBGA
In Stock:
7996
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 2.48 | |
10 | 2.4304 | |
100 | 2.356 | |
1000 | 2.2816 | |
10000 | 2.1824 |
Products Specifications
Mount | Surface Mount |
---|---|
Length | 13mm |
Density | 128 Mb |
HTS Code | 8542.32.00.02 |
I/O Type | COMMON |
ECCN Code | EAR99 |
Packaging | Tray |
Pin Count | 90 |
Published | 2011 |
Technology | SDRAM - Mobile LPDDR |
Access Time | 5ns |
Memory Size | 128Mb 4M x 32 |
Memory Type | Volatile |
Part Status | Active |
RoHS Status | ROHS3 Compliant |
Memory Width | 32 |
Organization | 4MX32 |
Memory Format | DRAM |
Mounting Type | Surface Mount |
Number of Pins | 90 |
Operating Mode | SYNCHRONOUS |
Package / Case | 90-TFBGA |
Refresh Cycles | 4096 |
Supply Voltage | 1.8V |
Terminal Pitch | 0.8mm |
Clock Frequency | 200MHz |
Number of Ports | 1 |
Memory Interface | Parallel |
Voltage - Supply | 1.7V~1.95V |
Address Bus Width | 14b |
Factory Lead Time | 10 Weeks |
Terminal Position | BOTTOM |
Additional Feature | AUTO/SELF REFRESH |
Height Seated (Max) | 1.025mm |
Number of Functions | 1 |
Standby Current-Max | 0.00001A |
Qualification Status | Not Qualified |
Operating Temperature | -40°C~85°C TA |
Nominal Supply Current | 55mA |
Number of Terminations | 90 |
Output Characteristics | 3-STATE |
Sequential Burst Length | 24816 |
Interleaved Burst Length | 24816 |
Operating Supply Voltage | 1.8V |
Supply Voltage-Max (Vsup) | 1.95V |
Supply Voltage-Min (Vsup) | 1.7V |
Write Cycle Time - Word, Page | 15ns |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |