W947D2HBJX5I
RoHS

W947D2HBJX5I

W947D2HBJX5I

Winbond

DRAM Chip Mobile LPDDR SDRAM 128M-Bit 4Mx32 1.8V 90-Pin VFBGA

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W947D2HBJX5I

In Stock: 7996
Pricing
QTY UNIT PRICE EXT PRICE
1 2.48
10 2.4304
100 2.356
1000 2.2816
10000 2.1824
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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Products Specifications
MountSurface Mount
Length13mm
Density128 Mb
HTS Code8542.32.00.02
I/O TypeCOMMON
ECCN CodeEAR99
PackagingTray
Pin Count90
Published2011
TechnologySDRAM - Mobile LPDDR
Access Time5ns
Memory Size128Mb 4M x 32
Memory TypeVolatile
Part StatusActive
RoHS StatusROHS3 Compliant
Memory Width32
Organization4MX32
Memory FormatDRAM
Mounting TypeSurface Mount
Number of Pins90
Operating ModeSYNCHRONOUS
Package / Case90-TFBGA
Refresh Cycles4096
Supply Voltage1.8V
Terminal Pitch0.8mm
Clock Frequency200MHz
Number of Ports1
Memory InterfaceParallel
Voltage - Supply1.7V~1.95V
Address Bus Width14b
Factory Lead Time10 Weeks
Terminal PositionBOTTOM
Additional FeatureAUTO/SELF REFRESH
Height Seated (Max)1.025mm
Number of Functions1
Standby Current-Max0.00001A
Qualification StatusNot Qualified
Operating Temperature-40°C~85°C TA
Nominal Supply Current55mA
Number of Terminations90
Output Characteristics3-STATE
Sequential Burst Length24816
Interleaved Burst Length24816
Operating Supply Voltage1.8V
Supply Voltage-Max (Vsup)1.95V
Supply Voltage-Min (Vsup)1.7V
Write Cycle Time - Word, Page15ns
Moisture Sensitivity Level (MSL)3 (168 Hours)